人物小传

播报编辑陈星弼（前排中）与部分高中同学合影（1945年）1931年1月28日，陈星弼出生于上海。1946年，转读上海敬业中学。1952年，从同济大学电机系毕业被分配至厦门大学电机系当助教。1953年，转到南京工学院无线电系（现东南大学信息科学与工程学院）任讲师。1956年，到中国科学院应用物理研究所进修半导体。1959年，任教于成都电讯工程学院（现电子科技大学）。1969年，到773厂支援研制氧化铅摄像管。1980年，到美国俄亥俄州大学做访问学者。1981年，转到加州大学伯克利分校，进行新型半导体功率器件的研究。 1983年，任电子科技大学微电子科学与工程系系主任。 1984年6月，任微电子研究所所长。 1993年，到加拿大多伦多大学做访问学者。1994年，到英国斯旺西大学做访问学者。 1999年，当选为中国科学院学部委员（院士）。2001年，加入九三学社。2019年12月4日，在四川成都逝世，享年89岁。

科研成就

科研综述陈星弼在伯克利校门前留影（摄于1981年）陈星弼于20世纪50年代末对漂移晶体管的存贮时间问题在国际上最早作了系统的理论分析。提出新的电荷法基本方程、不均匀介质中镜象电荷方程等。20世纪80年代以来，从事半导体电力电子器件的理论与结构创新方面的研究。从理论上解决了提高p-n结耐压的平面及非平面工艺的终端技术问题，作出了一些理论分析解。在解决MOS功率管中降低导通电阻与提高耐压之间的矛盾问题上作出了系列贡献。发明了耐压层的三种新结构，提高了功率器件的综合性能优值，其中横向耐压层新结构在制备工艺上与常规CMOS和BiCMOS工艺兼容，有利于发展耐高压的功率集成电路。 学术论著晶体管原理与设计(第2版)1959年，陈星弼首篇论文《关于半导体漂移三极管在饱和区工作时的储存时间问题》发表于《物理学报》；之后还写出了《论晶体管电荷控制法的基础》《一维不均匀媒质中的镜像法》《表面复合的漂移及扩散运动的影响》《小注入下晶体管I_c-V_（BE）特性的指数因子的研究》等论文；出版了《半导体物理》上下两册，《固体物理》《晶体管原理》《晶体管原理与设计》及《功率MOSFET与高压集成电路》等专著；在《物理学报》《半导体学报》《IEEE Trans. on E.D,Solid-State Electrinics,International Journal of Electronics 》等刊物发表多篇论文；截至2019年12月，在IEEE TED、IEEE EDL、SSE等期刊及ISPSD等会议上发表了超过130篇学术论文，著作8部，译著2部及其它文献等； 部分论著参考如下：陈星弼.p-n+结有场板时表面电场分布的简单表示式.电子学报,1986(01):36-43. 陈星弼.场限环的简单理论.电子学报,1988(03):6-10. 陈星弼.MOS型功率器件.电子学报,1990(05):97-105. 张波,陈星弼,李肇基.JTE结的二维电场分析.半导体学报,1993(10):626-632. 何进,陈星弼,杨传仁,王新.直接键合硅片的亲水处理及其表征.半导体技术,1999(05):23-25+29.DOI:10.13290/j.cnki.bdtjs.1999.05.007. 何进,王新,陈星弼.基于SDB技术的新结构PT型IGBT器件研制.半导体学报,2000(09):877-881. 杨洪强,郭丽娜,郭超,韩磊,陈星弼.具有电阻场板的薄膜SOI-LDMOS的精确解析.半导体学报,2003(09):977-982. 潘飞蹊,陈星弼.一种Boost型PFC变频控制电路的简单实现方案.电力电子技术,2004(01):30-32. 潘飞蹊,陈星弼.高功率因数Boost变换器电流滞环控制的一种简单实现方案.电子学报,2004(08):1330-1333. 陈星弼.超结器件.电力电子技术,2008,42(12):2-7. 发明专利陈星弼在查阅资料截至2019年12月，陈星弼申请中国发明专利20项（已授权17项）；申请美国发明专利19项（已授权16项，另有两项已通知准备授权）；申请国际发明专利1项；他提出超结耐压层理论，超结发明专利打破传统“硅极限”，该发明专利实现产业化，超结器件在全球市场年销售额超过10亿美元。 学术交流时间学术活动名称 1964年第二届四川省电子学会年会 1989年第六届全国半导体集成技术与硅材料学术年会 1991年第七届全国半导体集成技术与硅材料学术年会 1998年第二届中国西部地区微电子技术年会 2005年第十六届全国电源技术年会 科研奖励截至2019年12月，陈星弼获国家发明奖及科技进步奖2项，省部级奖励13项，部分获奖如下： 时间获奖项目奖励名称2015年高压功率MOSFET理论与设计国际功率半导体先驱奖

荣誉表彰

时间荣誉表彰1991年国务院特殊津贴 1997年电子工业部优秀教师奖 1998年全国优秀教师 1998年四川省学术技术带头人 1998年成都市劳动模范 1999年中国科学院院士 2015年国际功率半导体先驱奖 2018年首届IEEE ISPSD（国际电气与电子工程师协会）名人堂 2018年立德树人成就奖 2019年美国IEEE（国际电气与电子工程师协会）高级终身会员 2021年四川百年百杰科学家

社会任职

播报编辑时间担任职务1992年—1994年加拿大多伦多大学客座教授 1994年—1995年英国威尔斯大学天鹅海分校电子工程系客座教授 2009年第六届四川省科学技术顾问团顾问 电子工业部第十三所专用集成电路国家级重点实验室学术委员会主任委员 中国国家自然科学基金评审员 美国纽约科学院半导体学报编委 中国电子学会半导体与集成技术委员会委员 中国电子学会四川省分会理事兼半导体与集成技术分会主任委员 国际SSICT程序委员及分会主席及一届中德友好电子周分会主席

人才培养

教学获奖2018年，教学成果“电子信息硬件类创新人才的‘两融合、三互动、四训练’培养模式构建与实践”获中华人民共和国教育部高等教育国家级教学成果二等奖。 1990年出版教材《功率MOSFET与高压集成电路》获电子部教材一等奖。 讲授课程陈星弼院士作《做人与成才》讲座陈星弼从教以来曾讲授过十门以上不同课程，在校期间，负责筹建了相应的学科梯队和实验室，参与申报硕士、博士点，并为半导体所的研究生、本科生讲解《半导体集成电路》和《半导体工艺》等课程。 讲授量子力学，还开设了《半导体器件物理》《半导体器件的数值计算方法》《功率MOS》等新课。 素质教育陈星弼重视对理工科学生人文素质的培养，经常节选古文让学生诵读，语言文学能促进思维，增强表达，对科研及思维的开拓有用。陈星弼希望学生对专业以外的知识兼收并蓄，全面发展。

个人生活

播报编辑家庭背景 陈星弼肖像陈星弼出生于官宦之家。祖父曾为清朝武举人，父亲陈德徵就读于杭州之江大学化学系，母亲徐呵梅是浙江余姚人，在上海大学读文学。 婚姻家庭陈星弼妻子唐俊奇，为成电一系教师。 两人育有一子，在美国从事科研工作。

人物评价

播报编辑陈星弼在学术会议上发言“陈院士（陈星弼）的发明是中国人民的智慧瑰宝，也是全世界人民的共同智慧财产，该专利发明标志着半导体功率器件发展进入了一个叫作‘超级结’功率器件的新时代。”（美国德克萨斯大学电子工程系终身正教授周电评） “在功率器件领域，他（陈星弼）曾通过出色的研究工作单枪匹马让中国的研究进入国际学术舞台。与我们现在的科研条件相比，他是在资源极其有限的情况下实现这一巨大成就的。”（加拿大科学院院士、前院长，中国科学院外籍院士Jamal评）

人物影响

播报编辑教育发展基金2020年7月16日，陈星弼·科道芯国教育发展基金在电子科技大学成立，成立该基金是向陈星弼表达景仰和缅怀之情，鼓励科研人员在微电子领域努力耕耘、认真实践，做出更大的贡献。 EOTSOH*

投诉建议

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